Toshiba and NEC Develop Key Technologies for High-Density MRAM
Toshiba Corporation and NEC Corporation today announced two key advancements toward development of a magnetoresistive random access memory, a technology seen as key to the development of future generations of high performance mobile equipment. Unveiling the latest fruits of a joint development program dating back to 2002, the two companies announced a new cell design that halves power consumption during data writes and cuts writing errors, and a novel MRAM architecture with high speed characteristics and a performance that will support development of high-density devices. Full details of the new technology were presented on December 14 at IEDM (International Electron Devices Meeting) 2004 in San Francisco, USA.