Fujitsu Guns GaN HEMT for 3G Base Stations
Fujitsu Labs Ltd. said it has developed has developed a gallium nitride (GaN) high electron mobility transistor (HEMT) amplifier capable of 174 watts at 63 volts at 40 percent efficiency. If that doesn’t mean much to you, Fujitsu claims the HEMT will enable it to make more energy efficient 3 (or wasn’t that 4?) G base stations…