Fujitsu Develops Breakthrough Technology for Mobile Base Station Amplifiers
Fujitsu Laboratories Ltd. today announced the development of a technology that enables low-cost production of gallium-nitride(GaN)(*1) highelectron mobility transistors(HEMT)(*2), a key technology in mobile base station amplifiers for 3G and beyond. This breakthrough technology reduces GaN HEMT production costs to less than one-third that of conventional levels, thereby contributing to the realization of lower-cost GaN HEMT-based amplifiers. The technology is designed to enable practical use of compact, more energy-efficient mobile base stations using GaN HEMT. Details of this technology were presented at the International Electron Device Meeting (IEDM) 2004 held in San Francisco last week.