Fujitsu develops next-gen. GaN HEMT with 3x output power to enable increased signal range and capacity, High Electron Mobility Transistor led by the company in 1980’s now essential tech in global wireless IT network systems. Eng-PR https://t.co/zNYa5XqXqw pic.twitter.com/sQlkBEVCUa

— Mobile in Tokyo (@Wireless_Watch) August 10, 2018